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| DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124EEF NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k Product specification 2002 Mar 14 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k FEATURES * Built-in bias resistors * 250 mW total power dissipation * Very small 1.6 x 0.85 x 0.7 mm package * Flat leads * Excellent coplanarity * Improved thermal behaviour * Reduces number of components and required PCB area. APPLICATIONS * General purpose switching and amplification * Inverter and interface circuits * Driver circuits. DESCRIPTION NPN resistor-equipped transistor in a SOT490 (SC-89) plastic package. 1 2 MAM412 PDTC124EEF QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor MAX. 50 100 22 22 UNIT V mA k k handbook, halfpage 3 R1 1 R2 3 2 MARKING TYPE NUMBER PDTC124EEF MARKING CODE 36 Top view Fig.1 Simplified outline (SOT490) and symbol. 1 2 MGA893 - 1 3 Fig.2 Equivalent inverter symbol. 2002 Mar 14 2 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO Vi PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 - - - - - -65 - -65 CONDITIONS open emitter open base open collector - - - MIN. PDTC124EEF MAX. 50 50 10 +40 -10 100 100 250 +150 150 +150 V V V V V UNIT mA mA mW C C C 1. For mounting conditions, see "Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook". THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. For mounting conditions, see "Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook". CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input off voltage input on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 3 CONDITIONS VCB = 50 V; IE = 0 VCE = 30 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 5 mA MIN. - - - - 60 - - 2.5 15.4 0.8 - TYP. - - - - - - 1.1 1.7 22 1 - MAX. 100 1 50 180 - 150 0.8 - 28.6 1.2 2.5 pF mV V V k UNIT nA A A A PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 500 UNIT K/W 2002 Mar 14 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k PDTC124EEF 103 handbook, halfpage hFE (2) (1) MGM916 handbook, halfpage 1 MGM915 VCEsat (3) (V) 102 10-1 (1) (2) (3) 10 1 10-1 1 10 IC (mA) 102 10-2 10-1 1 10 IC (mA) 102 VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -40 C. IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -40 C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 10 MGM918 102 handbook, halfpage Vi(on) MGM917 Vi(off) (V) (V) 10 (1) (2) (1) (2) (3) (3) 1 1 10-1 10-2 10-1 1 IC (mA) 10 10-1 10-1 1 10 IC (mA) 102 VCE = 5 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C. VCE = 0.3 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.5 Input-off voltage as a function of collector current; typical values. Fig.6 Input-on voltage as a function of collector current; typical values. 2002 Mar 14 4 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k PACKAGE OUTLINE Plastic surface mounted package; 3 leads PDTC124EEF SOT490 D B E A X HE vMA 3 A 1 e1 e bp 2 wMB Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1 OUTLINE VERSION SOT490 REFERENCES IEC JEDEC EIAJ SC-89 EUROPEAN PROJECTION ISSUE DATE 98-10-23 2002 Mar 14 5 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PDTC124EEF This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Mar 14 6 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k NOTES PDTC124EEF 2002 Mar 14 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Mar 14 Document order number: 9397 750 09371 |
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